Wafer Development Services
Supports ELO (epitaxial lateral overgrowth) as well!
We are developing wafers that can accommodate MOCVD epitaxial growth on GaN, Sapphire, and SiC substrates. These wafers can be used for various applications, including high-frequency devices, power devices, and lighting. Please feel free to contact us if you have any requests. 【Features】 ■ Low defect density ■ Surface flatness ■ Large area expansion of 4 inches or more is possible *For more details, please feel free to inquire.
- 企業：パウデック
- 価格：Other
